Method of manufacturing semiconductor device and substrate processing method

A substrate processing method comprising:

• forming a film containing a predetermined element, oxygen, carbon and nitrogen on a substrate by repeating a cycle, the cycle comprising:
• (a) supplying a source gas containing the predetermined element and a halogen element to the substrate;
• (b) supplying a first reactive gas containing three elements including carbon, nitrogen and hydrogen to the substrate;
• (c) supplying a nitriding gas as a second reactive gas to the substrate;
• (d) supplying an oxidizing gas as a third reactive gas to the substrate;
• and
• (e) supplying an hydrogen-containing gas as a fourth reactive gas to the substrate,
• wherein (a) through (e) are non-simultaneously performed.

A method of manufacturing a semiconductor device, comprising:

• forming a film containing a predetermined element, oxygen, carbon and nitrogen on a substrate by repeating a cycle, the cycle comprising:
• (a) forming a first layer including the predetermined element, nitrogen and carbon by alternately performing, a predetermined number of times, supplying a source gas containing the predetermined element and a halogen element to the substrate;
• and supplying a first reactive gas containing three elements including carbon, nitrogen and hydrogen to the substrate;
• (b) forming a second layer by supplying a nitriding gas as a second reactive gas to the substrate to nitride the first layer;
• (c) forming a third layer by supplying an oxidizing gas as a third reactive gas to the substrate to oxidize the second layer;
• and
• (d) forming a fourth layer by supplying an hydrogen-containing gas as a fourth reactive gas to the substrate to modify a surface of the third layer,
• wherein (a) through (d) are non-simultaneously performed.