Method of forming a layer using a trialkylsilane silicon precursor compound

A method of forming a layer, the method comprising:

• forming a dielectric layer using a trialkylsilane-based silicon precursor compound expressed by the following chemical formula 1,
• wherein each of R1, R2, and R3 is hydrogen or an alkyl having 3˜5 carbons;
• R1, R2, and R3 are not all hydrogen;
• X is one of hydrogen, a hydroxyl group, an amide group, an alkoxide group, a halide group, or Si(R*)3;
• R* is hydrogen or an alkyl group having 3˜5 carbon(s);
• and the dielectric layer is a silicon-doped metal oxide layer or a silicon-doped metal nitride layer,
• wherein forming the dielectric layer includes alternately forming a first sub-dielectric layer and a second sub-dielectric layer;
• forming the first sub-dielectric layer includes forming m atomic layers of a metal oxide layer or a metal nitride layer;
• forming the second sub-dielectric layer includes forming n atomic layers of a silicon oxide layer or a silicon nitride layer;
• and m and n are positive integers, and
• wherein the forming n atomic layers includes repeating n times:
• supplying the trialkylsilane-based silicon precursor compound to a substrate such that the trialkylsilane-based silicon precursor compound is adsorbed onto the substrate;
• and
• supplying the oxygen-containing gas or the nitrogen-containing gas to react with the trialkylsilane-based silicon precursor compound to form one atomic layer of the silicon oxide layer or the silicon nitride layer.