Low temperature polycrystalline silicon thin film and method of producing the same, array substrate and display apparatus

A method for producing a low temperature polycrystalline silicon thin film, comprising steps of:

• providing a substrate;
• forming a thermal conduction and electrical insulation layer, a buffer layer and an amorphous silicon layer on the substrate in this order;
• and
• performing a high-temperature treatment and a laser annealing on the amorphous silicon layer to convert the amorphous silicon layer to a polycrystalline silicon thin film,
• wherein the thermal conduction and electrical insulation layer comprises regular patterns distributed on the substrate, and
• wherein said step of performing the high-temperature treatment and the laser annealing on the amorphous silicon layer to convert the amorphous silicon layer to a polycrystalline silicon thin film comprising steps of:
• performing a high-temperature treatment on the amorphous silicon layer at a temperature of 400˜500° C. for a period of 0.5˜3 hours;
• and
• performing an excimer laser annealing on the amorphous silicon layer processed by the high-temperature treatment with a laser having a pulse frequency of 300 Hz, an overlapping coefficient of 92%˜98%, and an energy density of 200˜500 mJ/cm2;
• and
• wherein during the laser annealing, the amorphous silicon thin film is cooled more quickly in a first area with the patterns of the thermal conduction and electrical insulation layer than a second area without the patterns of the thermal conduction and electrical insulation layer.