High-throughput ion implanter
AssigneeVarian Semiconductor Equipment Associates, Inc.
InventorsWilliam T. Weaver, Charles T. Carlson, Joseph C. Olson, James Buonodono, Paul Sullivan
Life of this patent
Estimating the term…
Abstract
One embodiment of this ion implanter includes an ion source and a process chamber. This process chamber is connected to the ion source and separated from the ion source by a plurality of extraction electrodes. A carrier holds multiple workpieces. A mask loader in the process chamber connects a mask to the carrier. A transfer chamber and load lock may be connected to the process chamber. The ion implanter is configured to perform either blanket or selective implantation of the workpieces.
Claims17
An ion implanter comprising:
- an ion source;
- a process chamber connected to said ion source and separated from said ion source by a plurality of extraction electrodes;
- a carrier configured to hold a plurality of workpieces and to be removably attachable to a scan robot;
- the scan robot configured to transport said carrier through an ion beam directed from said ion source;
- and
- a mask loader in said process chamber, wherein said mask loader is configured to connect a mask to said carrier while said carrier is disposed on said scan robot, wherein said mask has dimensions large enough to cover said plurality of workpieces.
An ion implanter comprising:
- an ion source;
- a process chamber connected to said ion source and separated from said ion source by a plurality of extraction electrodes;
- a carrier configured to hold a plurality of workpieces and to be removably attachable to a scan robot;
- the scan robot configured to transport said carrier holding said plurality of workpieces through an ion beam directed from said ion source;
- a mask loader in said process chamber, wherein said mask loader is configured to connect a mask to said carrier while said carrier is disposed on said scan robot;
- a transfer chamber connected to said process chamber;
- a load lock connected to said transfer chamber;
- a transfer robot in said transfer chamber configured to load said plurality of workpieces on said carrier and to transport said plurality of workpieces between said load lock and said process chamber;
- and
- a workpiece transport system connected to said load lock and configured to load and unload said plurality of workpieces from said load lock, wherein said mask has dimensions large enough to cover said plurality of workpieces.
An ion implanter comprising:
- a first ion source;
- a second ion source, wherein one of said ion source and said second ion source generates n-type ions and another of said ion source and said second ion source generates p-type ions;
- a first process chamber connected to said ion first source and separated from said first ion source by a plurality of extraction electrodes;
- a carrier configured to hold a plurality of workpieces;
- a first mask loader in said first process chamber, wherein said first mask loader is configured to connect a mask to said carrier;
- a transfer chamber connected to said first process chamber;
- a load lock connected to said transfer chamber;
- a transfer robot in said transfer chamber configured to transport said plurality of workpieces between said load lock and said first process chamber;
- a second process chamber connected to said transfer chamber and said second ion source, wherein said second process chamber is separated from said second ion source by a second plurality of extraction electrodes;
- a second mask loader in said second process chamber, wherein said second mask loader is configured to connect a second mask to said carrier;
- and
- a workpiece transport system connected to said load lock and configured to load and unload said plurality of workpieces from said load lock.
Dependencies are inferred from the claim text.