Adaptive program pulse duration based on temperature

A memory device, comprising:

• a set of memory cells connected to a selected word line;
• a driver at one end of the selected word line;
• and
• a control circuit, the control circuit is configured to:
• obtain data indicating a temperature of the memory device;
• set a program pulse duration based on the temperature, wherein for temperatures below a breakpoint temperature, the program pulse duration increases with a decrease in the temperature and for temperatures above the breakpoint temperature, the program pulse duration increases with an increase in the temperature;
• and
• program a set of memory cells connected to the selected word line using program pulses having the program pulse duration.

A method for operating a memory device, comprising:

• obtaining data indicating a temperature of the memory device;
• determining a program pulse duration which is at least as long as a minimum allowable program pulse duration, the minimum allowable program pulse duration is relatively long when the temperature is relatively high and compensates for a temperature-based change in a time constant of a selected word line in the memory device;
• and
• programming a set of memory cells connected to the selected word line using program pulses having the program pulse duration, wherein:
• the selected word line is in a set of word lines;
• each word line of the set of word lines is at a different height in the memory device and is adjacent to a portion of a vertical memory hole;
• a width of the vertical memory hole varies along a height of the memory hole;
• and
• the program pulse duration is based on a height of the selected word line in the memory device and is relatively short when a portion of the memory hole to which the selected word line is adjacent is relatively narrow.