Precharge control signal generator and semiconductor memory device therewith
AssigneeSamsung Electronics Co., Ltd.
InventorHyun-Jin Shin
Life of this patent
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Abstract
A precharge control signal generator and a semiconductor memory device include a precharge control signal generating circuit which generates a precharge control signal and applies the precharge control signal to a sensing circuit, and a sensing circuit configured to precharge a bit line connected to a memory cell according to the precharge control signal and read data stored in the memory cell. The precharge control signal controls the sensing circuit so that a precharge time is adjusted according to operating temperature.
Claims16
A semiconductor memory device, comprising:
- a precharge control signal generating circuit configured to generate a precharge control signal and to apply the precharge control signal to a sensing circuit;
- and
- the sensing circuit configured to precharge a bit line connected to a memory cell according to the precharge control signal and read data stored in the memory cell,
- wherein the precharge control signal controls the sensing circuit so that a precharge time is adjusted according to operating temperature, and
- wherein the precharge control signal generating circuit comprises a proportional to absolute temperature (PTAT) current generating circuit configured to generate a PTAT current used to generate the precharge control signal.
A semiconductor memory device, comprising:
- a precharge control signal generating circuit configured to generate a precharge control signal and to apply the precharge control signal to a sensing circuit;
- and
- the sensing circuit configured to precharge a bit line connected to a memory cell according to the precharge control signal and read data stored in the memory cell,
- wherein the precharge control signal controls the sensing circuit so that a precharge time is adjusted according to operating temperature, and
- wherein the precharge control signal generating circuit comprises:
- a PTAT voltage generating circuit configured to generate a PTAT voltage used to generate the precharge control signal.
A precharge control signal generating circuit which generates a precharge control signal for controlling a precharge time with respect to precharge operation performed in advance of a read operation of data stored in a memory cell, wherein the precharge control signal adjusts the precharge time according to operating temperature, and wherein the precharge control signal generating circuit comprises a PTAT current generating circuit configured to generate a PTAT current used to generate the precharge control signal.
Dependencies are inferred from the claim text.