Programming method of memory array

A programming method of a memory array, wherein the memory array comprises a target memory cell electrically connected to a first word line, two periphery memory cells electrically connected to the first word line and adjacent to the target memory cell, and a plurality of non-target memory cells, a first transistor, and a second transistor connected in series with the target memory cell, and the programming method comprises:

• performing a first programming operation on the target memory cell, wherein the step of performing the first programming operation on the target memory cell comprises:
• turning on the first transistor and turning off the second transistor;
• and
• turning on the non-target memory cells by using a passing voltage and increasing a level of a programming voltage transmitted by the first word line;
• verifying the target memory cell and the two periphery memory cells through at least one verification operation to obtain a first verification result after the first programming operation is performed on the target memory cell;
• and
• determining whether to perform a second programming operation or a third programming operation on the target memory cell according to the first verification result, wherein the step of performing the second programming operation or the third programming operation on the target memory cell comprises:
• turning off the first transistor and the second transistor;
• and
• increasing a level of the passing voltage for turning on the non-target memory cells and the level of the programming voltage transmitted by the first word line.