State-dependent lockout in non-volatile memory

A sense amplifier circuit, comprising:

• a bus;
• a set of user data latches configured to receive program data for programming to a non-volatile storage element, the set of user data latches each having an output coupled to the bus;
• an internal sense node selectively connectable to a first bit line in communication with the non-volatile storage element, the internal sense node charges to a sense level during program verification for a selected state;
• and
• a first latch scan circuit having a first node connected to the internal sense node and a first switch having a gate connected to the bus, wherein the first latch scan circuit drains the sense node from the sense level prior to sensing when the program data in the set of user data latches does not match the selected state.

A non-volatile storage device, comprising:

• a bit line in communication with a non-volatile storage element that is configured for programming to a plurality of states;
• a set of user data latches configured to store program data for programming to the non-volatile storage element;
• a sense amplifier configured to control the bit line during programming and verify programming of the non-volatile storage element according to the program data;
• and
• a sense node in the sense amplifier that is pre-charged to a sense level to verify programming of the non-volatile storage element;
• wherein the sense amplifier is configured to compare the program data to each of the plurality of states prior to sensing at each state;
• and
• wherein the sense amplifier is configured to discharge the sense node from the sense level to lockout the bit line prior to sensing at a selected one of the states when the program data does match the selected state.

A method of programming non-volatile storage element;

• applying one or more programming pulses to a word line in communication with a plurality of non-volatile storage elements;
• after applying the one or more programming pulses, pre-charging a sense node of a plurality of sense amplifiers to verify programming of the plurality of non-volatile storage elements to a plurality of states, wherein each sense amplifier is selectively connectable to one of a plurality of bit lines in communication with the non-volatile storage elements;
• before sensing at a first verify level corresponding to a first state, comparing program data for each non-volatile storage element to the first state;
• and
• if the program data for a non-volatile storage element does not correspond to the first state, discharging the sense node of the sense amplifier for the non-volatile storage element.