Self-storing and self-restoring non-volatile static random access memory

Abstract

An apparatus is provided which comprises: a Static Random Access Memory (SRAM) cell with at least two non-volatile (NV) resistive memory elements integrated within the SRAM cell; and first logic to self-store data stored in the SRAM cell to the at least two NV resistive memory elements. A method is provided which comprises performing a self-storing operation, when a voltage applied to a SRAM cell decreases to a threshold voltage, to store voltage states of the SRAM cell to at least two NV resistive memory elements, wherein the at least two NV resistive memory elements are integrated with the SRAM cell; and performing self-restoring operation, when the voltage applied to the SRAM cell increases to the threshold voltage, by copying data from the at least two NV resistive memory elements to storage nodes of the SRAM cell.

Dependencies are inferred from the claim text.