Write and erase scheme for resistive memory device

A device including a non-volatile solid state memory comprising:

• a cell array comprising a plurality of resistive memory cells configured in a plurality of rows of resistive memory cells and a plurality of columns of resistive memory cells, wherein each resistive memory cell from the plurality of memory cells comprises a top electrode, a bottom electrode, and a resistive switching medium between the top electrode and the bottom electrode, wherein top electrodes of respective resistive memory cells within a column of resistive memory cells are coupled, and wherein bottom electrodes of respective resistive memory cells within a row of resistive memory cells are coupled, and further wherein a resistive memory cell is formed at an intersection of the column of the resistive memory cells and the row of resistive memory cells;
• a control circuit configured to provide a bias voltage in response to an absence of a termination signal;
• a first select circuit coupled to the cell array and to the control circuit, wherein the first select circuit is configured to direct the bias voltage to the top electrodes of the respective resistive memory cells within the column of resistive memory cells, including the top electrode of the resistive memory cell;
• a second select circuit coupled to the cell array and ground, wherein the second select circuit is configured to selectively couple the bottom electrodes of the respective resistive memory cells within the row of resistive memory cells to ground, including the bottom electrode of the resistive memory cell;
• and
• a sense circuit coupled the cell array and to the control circuit, wherein the sense circuit is configured to determine whether a change in current with respect to time for the resistive memory cell under the bias voltage satisfies a predetermined relationship with respect to a threshold change in current with respect to time, and wherein the sense circuit provides the termination signal in response to a determination that the change in the current with respect to time satisfies the relationship with respect to the threshold change in current with respect to time.

A method for a device comprising:

• providing a resistive switching device including a top electrode, a switching element, and a bottom electrode;
• applying a controlled voltage to the top electrode of the resistive switching device and ground to the bottom electrode of the resistive switching device, wherein the resistive switching device provides a time-varying output current in response to the controlled voltage;
• measuring current at the resistive switching device and determining a value of the time-varying output current with respect to time;
• and
• determining whether the value of the time-varying output current with respect to time satisfies a defined relationship with respect to a predetermined value;
• and
• initiating a termination process to stop applying the controlled voltage to the top electrode in response to a determination that the value of the time-varying output current with respect to time satisfies the defined relationship with respect to the predetermined value.