Resistance variable memory sensing
AssigneeMicron Technology, Inc.
InventorsFerdinando Bedeschi, Roberto Gastaldi
Life of this patent
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Abstract
The present disclosure includes apparatuses and methods for sensing a resistance variable memory cell. A number of embodiments include programming a memory cell to an initial data state and determining a data state of the memory cell by applying a programming signal to the memory cell, the programming signal associated with programming memory cells to a particular data state, and determining whether the data state of the memory cell changes from the initial data state to the particular data state during application of the programming signal.
Claims19
A method for sensing a resistance variable memory cell, comprising:
- applying a programming ramp signal to the memory cell, wherein the programming signal is a signal that is used to program the memory cell to a particular resistance state and is of a sufficient magnitude to program the memory cell to the particular resistance state,
- sensing a signal associated with the memory cell while the programming signal is being applied to the memory during a first time period;
- sensing a signal associated with the memory cell while the programming signal is being applied to the memory during a second time period;
- and
- determining a resistance state of the memory cell based on the signals sensed during the first time period and during the second time period by comparing the signals sensed during the first time period and during the second time period.
An apparatus, comprising:
- a controller coupled to a resistance variable memory cell and configured to:
- determine a resistance state of the memory cell by:
- applying a programming ramp signal to the memory cell,
- wherein the programming signal is a signal that is used to program the memory cell to a particular resistance state and is of a sufficient magnitude to program the memory cell to the particular resistance state;
- and
- determining whether the resistance state of the memory cell changes from an initial resistance state to the particular resistance state during application of the programming signal, by comparing a first sensed signal associated with the memory cell responsive to the applied programming signal to a second sensed signal associated with the memory cell responsive to the applied programming signal.
An apparatus, comprising:
- a controller coupled to a resistance variable memory cell and configured to control:
- determining a resistance state of the memory cell by:
- applying a programming ramp signal to the memory cell,
- wherein the programming signal is a signal that is used to program the memory cell to a particular resistance state and is of a sufficient magnitude to program the memory cell to the particular resistance state;
- comparing a signal associated with the memory cell during a first time period to a signal associated with the memory cell during a second time period while the programming signal is applied to the memory cell;
- and
- determining whether the resistance state of the memory cell changes from an initial resistance state to a particular resistance state during application of the programming signal.
Dependencies are inferred from the claim text.