US 9,437,284 B1Granted

Memory devices and control methods thereof

AssigneeVanguard International Semiconductor Corporation

InventorsJui-Lung Chen, Wei-Ting Chen, Yu-Hsi Ke

Life of this patent

Estimating the term…

Loading patent…

Abstract

A memory device is provided. The memory device includes a memory device, a plurality of word lines and bit lines, first and second decoders, and a control circuit. The memory array includes memory cells on rows and columns. Each word line is coupled to the memory cells in one row. Each bit line is coupled to the memory cells in one column. The first decoder selects one word line according to an address signal and a first control signal. The control circuit respectively generates the first control signal and the second control signal according to a first clock signal and a second clock signal. In the period during which the first decoder selects the one word line, the second decoder selects at least two bit lines according to the address signal and a second control signal. The memory device performs a read/write operation on the selected bit lines.

Claims14

Dependent claims

A memory device comprising:

a memory array comprising a plurality of memory cells disposed on a plurality of rows and a plurality of columns;
a plurality of word lines, each coupled to the memory cells disposed on one of the plurality of rows;
a plurality of bit lines, each coupled to the memory cells disposed on one of the plurality of columns;
a first decoder receiving an address signal and a first control signal and selecting one of the plurality of word lines according to the address signal and the first control signal;
a second decoder receiving the address signal and a second control signal;
and
a control circuit receiving a first clock signal and a second clock signal, generating the first control signal according to the first clock signal, and generating the second signal according to the second clock signal,
wherein in a period during which the first decoder selects the one of the plurality of word lines according to the address signal and the first control signal, the second decoder selects at least two of the plurality of bit lines according to the address signal and the second control signal, and the memory device performs a read/write operation on the selected at least two of the plurality of bit lines.

5 more elements

A control method for a memory device which comprises a memory array, a plurality of word lines coupled to the memory device, and a plurality of bit lines coupled to the memory device, the control method comprising:

receiving a first clock signal and a second clock signal;
generating a first control signal according to the first clock signal;
generating a second signal according to the second clock signal;
selecting one of the plurality of word lines according to an address signal and an enable state of the first control signal;
in a period during which the one of the plurality of word lines according to the address signal and the first control signal is selected, selecting at least two of the plurality of bit lines according to the address signal and an enable signal of the second control signal;
and
performing a read/write operation on the selected at least two of the plurality of bit lines.

4 more elements

Dependencies are inferred from the claim text.

Facts

Application: 14/957,311Filed 2 Dec 2015
Granted: 6 Sep 2016
Term ends: Not estimatedThe source records don’t support an estimate.

Classification5 codes

G11C 11/419
For memory cells of the field-effect type: read-write [R-W] circuits
G11C 11/412
Forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt…
G11C 11/413
Forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt…
G11C 11/418
For memory cells of the field-effect type: address circuits

Family

No related US applications are recorded in the indexed filing history.

Timeline

Citations

Open elsewhere

Building an agent or pulling many patents? Use the API or MCP server instead of scraping pages. Get an API key