Memory system and method for operating the same

A memory system comprising:

• a memory suitable for including a cell array having a plurality of word lines and an address storage unit that stores an address in response to a capture command, wherein the memory sequentially refreshes the plurality of word lines in response to a refresh command inputted at a set cycle, and refreshes a word line corresponding to the stored address among the plurality of word lines in response to the refresh command when the address is stored in the address storage unit;
• and
• a memory controller suitable for transmitting the refresh command to the memory at the set cycle, and transmitting the capture command and an address of the detected word line to the memory, when a word line satisfying one or more of conditions that the number of activation times is equal to or more than a reference number and an activation frequency is equal to or more than a reference frequency is detected,
• wherein the memory further comprises:
• an address selection unit suitable for receiving an input address, a counting address, and the stored address in the address storage unit, outputting the input address when an active command is activated, outputting the counting address when a refresh signal is activated, and outputting the stored address when a target refresh signal is activated;
• a refresh control unit suitable for activating the refresh signal when the refresh command is activated, activating the target refresh signal when the refresh command is activated after the capture command is activated, and activating a refresh active signal in response to the refresh command;
• and
• a word line control unit suitable for activating a word line corresponding to an address outputted from the address selection unit among the plurality of word lines in response to the active command or the refresh active signal.