US 9,437,268 B2Granted

Free layer with out-of-plane anisotropy for magnetic device applications

AssigneeHeadway Technologies, Inc.

InventorsYu-Jen Wang, Guenole Jan, Ru-Ying Tong

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Abstract

Synthetic antiferromagnetic (SAF) and synthetic ferrimagnetic (SyF) free layer structures are disclosed that reduce Ho (for a SAF free layer), increase perpendicular magnetic anisotropy (PMA), and provide higher thermal stability up to at least 400° C. The SAF and SyF structures have a FL1/DL1/spacer/DL2/FL2 configuration wherein FL1 and FL2 are free layers with PMA, the coupling layer induces antiferromagnetic or ferrimagnetic coupling between FL1 and FL2 depending on thickness, and DL1 and DL2 are dusting layers that enhance the coupling between FL1 and FL2. The SAF free layer may be used with a SAF reference layer in STT-MRAM memory elements or in spintronic devices including a spin transfer oscillator. Furthermore, a dual SAF structure is described that may provide further advantages in terms of Ho, PMA, and thermal stability.

Claims8

Dependent claims

A magnetic device having thermal stability to at least 400° C., comprising:

(a) a synthetic antiferromagnetic (SAF) free layer that has a FL1/DL1/first coupling layer/DL2/FL2 configuration wherein FL1 and FL2 are free layers exhibiting perpendicular magnetic anisotropy, the first coupling layer is a non-magnetic metal that induces RKKY (antiferromagnetic) coupling between the FL1 and FL2 layers, and DL1 and DL2 are Co, Fe, Ni, CoNiFe, or NiFe dusting layers that enhance the RKKY coupling between FL1 and FL2;
(b) a synthetic antiferromagnetic (SAF) reference layer that has a RL1/DL5/second coupling layer/DL6/RL2 configuration wherein RL1 and RL2 are reference layers exhibiting perpendicular magnetic anisotropy, the second coupling layer is a non-magnetic metal that induces RKKY (antiferromagnetic) coupling between the RL1 and RL2 layers, and DL5 and DL6 are Co, Fe, Ni, CoNiFe, or NiFe dusting layers that enhance the RKKY coupling between RL1 and RL2;
and
(c) a non-magnetic spacer formed between the SAF reference layer and SAF free layer wherein the FL1 layer contacts a top surface of the non-magnetic spacer that is a tunnel barrier layer or a Cu spacer in a bottom spin valve configuration, or the FL2 layer contacts a bottom surface of the non-magnetic spacer in a top spin valve configuration.

1 more element

Dependencies are inferred from the claim text.

Facts

Application: 14/886,871Filed 19 Oct 2015 · continuation
Priority: 27 Nov 2012
Published: US 2016/0042779 A111 Feb 2016
Granted: 6 Sep 2016
Term ends: Not estimatedThe source records don’t support an estimate.

Classification29 codes

G11C 11/161
Using elements in which the storage effect is based on magnetic spin effect: details concerning the memory cell structure, e.g. the layers of the…
B82Y 40/00
Manufacture or treatment of nanostructures
G01R 33/00
Arrangements or instruments for measuring magnetic variables
G01R 33/093
Magnetoresistive devices: using multilayer structures, e.g. giant magnetoresistance sensors

Family

Application13/686,169Parent of this continuation · filed 27 Nov 2012
US 2016/0042779 A1Pre-grant publication · published 11 Feb 2016
US 9,252,710 B2Parent of this continuation
US 2014/0145792 A1Published application
US 9,437,268 B2This patent

From the US filing history. Foreign family members aren’t listed.

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