Storage element and memory
AssigneeSony Corporation
InventorsYutaka Higo, Masanori Hosomi, Hiroyuki Ohmori, Kazuhiro Bessho, Tetsuya Asayama, Kazutaka Yamane, Hiroyuki Uchida
Life of this patent
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Abstract
A storage element includes a magnetization fixed layer, and a magnetization free layer. The magnetization fixed layer includes a plurality of ferromagnetic layers laminated together with a coupling layer formed between each pair of adjacent ferromagnetic layers. The magnetization directions of the ferromagnetic layers are inclined with respect to a magnetization direction of the magnetization fixed layer.
Claims21
A storage element comprising:
- a magnetization fixed layer;
- a magnetization free layer including a plurality of ferromagnetic layers laminated together with a coupling layer formed between each pair of adjacent ferromagnetic layers;
- and
- a nonmagnetic intermediate layer that is a tunnel insulating layer and is formed between the magnetization fixed layer and the magnetization free layer,
- wherein magnetization directions of the ferromagnetic layers are inclined with respect to a magnetization direction of the magnetization fixed layer.
A method of writing information to a storage element including a magnetization fixed layer, a magnetization free layer including a plurality of ferromagnetic layers laminated together with a coupling layer formed between each pair of adjacent ferromagnetic layers, and a nonmagnetic intermediate layer that is a tunnel insulating layer and is formed between the magnetization fixed layer and the magnetization free layer, the method comprising:
- applying a current in a magnetization direction of the magnetization fixed layer to cause a spin torque magnetization reversal in the magnetization free layer,
- wherein magnetization directions of the ferromagnetic layers are inclined with respect to the magnetization direction of the magnetization fixed layer.
A spin torque magnetic random access memory element comprising:
- a magnetization fixed layer having a fixed magnetization in a perpendicular direction relative to a film surface of the magnetization fixed layer;
- a magnetization free layer including a plurality of ferromagnetic layers laminated together with a coupling layer formed between each pair of adjacent ferromagnetic layers, thereby magnetically coupling the ferromagnetic layers;
- and
- a nonmagnetic layer that is a tunnel insulating layer and is formed between the magnetization fixed layer and the magnetization free layer,
- wherein magnetization directions of the ferromagnetic layers are inclined with respect to the perpendicular direction.
A magnetoresistive effect type magnetic head comprising:
- a first magnetic shield formed on a substrate via an insulating layer;
- a magnetic sensing element including
- a magnetization fixed layer,
- a magnetization free layer including a plurality of ferromagnetic layers laminated together with a coupling layer formed between each pair of adjacent ferromagnetic layers, and
- a nonmagnetic intermediate layer that is a tunnel insulating layer and is formed between the magnetization fixed layer and the magnetization free layer;
- and
- a second magnetic shield formed on the magnetic sensing element via the insulating layer,
- wherein magnetization directions of the ferromagnetic layers are inclined with respect to a magnetization direction of the magnetization fixed layer.
A storage element comprising:
- a magnetization fixed layer;
- and
- a magnetization free layer including a plurality of ferromagnetic layers laminated together with a coupling layer formed between each pair of adjacent ferromagnetic layers,
- wherein magnetization directions of the ferromagnetic layers are inclined with respect to a magnetization direction of the magnetization fixed layer, the magnetization direction of the magnetization fixed layer being in a direction perpendicular to a film surface of the magnetization fixed layer.
A storage element comprising:
- a magnetization fixed layer;
- and
- a magnetization free layer including first and second ferromagnetic layers laminated together with a coupling layer formed therebetween,
- wherein a magnetization direction of the fixed layer is perpendicular to a film surface of the fixed layer, and magnetization directions of the first and second ferromagnetic layers are inclined with respect to the magnetization direction of the magnetization fixed layer,
- wherein the magnetization free layer includes a first ferromagnetic layer and a second ferromagnetic layer with one of the coupling layers formed therebetween,
- wherein a perpendicular axis extends in a direction perpendicular to a film surface of the magnetization free layer through the magnetization free layer,
- wherein an angle between the direction of magnetization of the first ferromagnetic layer and the perpendicular axis is θ1, and
- wherein an angle between the direction of the magnetization of the second ferromagnetic layer and the perpendicular axis is defined as θ2.
Dependencies are inferred from the claim text.