Memory devices having data lines included in top and bottom conductive lines

A method comprising:

• selecting a first memory cell string in an operation of a device, the first memory cell string coupled to a first conductive line in a first set of conductive lines located on a first level of the device and coupled to a first conductive line in a second set of conductive lines located on a second level of the device, wherein at least one conductive line in the first set of conductive lines is configured as a data line;
• and
• selecting a second memory cell string in the operation of a device, the second memory cell string coupled to a second conductive line in a first set of conductive lines and coupled to a second conductive line in the second set of conductive lines, wherein at least one conductive line in the second set of conductive lines is configured as a data line.