US 9,436,195 B2Granted

Semiconductor device having voltage generation circuit

AssigneeRenesas Electronics Corporation

InventorsShinya Sano, Yasuhiko Takahashi, Masashi Horiguchi

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Abstract

The present invention provides a voltage generation circuit which outputs high-precision output voltage in a wide temperature range. A semiconductor device has a voltage generation circuit. The voltage generation circuit has a reference voltage generation circuit which outputs reference voltage, and a plurality of correction circuits for generating a correction current and making it fed back to the reference voltage generation circuit. The correction circuits generate sub correction currents which monotonously increase from predetermined temperature which varies among the correction circuits toward a low-temperature side or a high-temperature side. The correction current is sum of a plurality of sub correction currents.

Claims35

Dependent claims

A semiconductor device having a voltage generation circuit,

wherein the voltage generation circuit is configured to operate with a power supply voltage from 1.0V and comprises:
a reference voltage generation circuit which outputs a first reference voltage and a second reference voltage which is proportional to the first reference voltage;
and
a plurality of correction circuits which generate correction current based on the second reference voltage and input the correction current to the reference voltage generation circuit,
wherein each of the correction circuits generates a sub correction current which monotonously increases with increasing temperature from a predetermined temperature, or which monotonously increases with decreasing temperature from a predetermined temperature,
wherein the predetermined temperature varies among the correction circuits, and
wherein the correction current is sum of a plurality of the sub correction currents generated by the correction circuits.

4 more elements

A semiconductor device including a voltage generation circuit configured to operate with a power supply voltage equal to or lower than 1.0V,

the voltage generation circuit comprising:
a reference voltage generation circuit which outputs a first reference voltage and a second reference voltage generated based on the first reference voltage;
and
a plurality of correction circuits which generate correction current based on the second reference voltage and input the correction current to the reference voltage generation circuit,
wherein each of the correction circuits generates a sub correction current,
wherein the sub correction currents have different temperature characteristics, and
wherein the correction current is sum of a plurality of the sub correction currents generated by the correction circuits.

4 more elements

Dependencies are inferred from the claim text.

Facts

Application: 14/518,246Filed 20 Oct 2014
Priority: JP 2012-1296837 Jun 2012
Published: US 2015/0035588 A15 Feb 2015
Granted: 6 Sep 2016
Term ends: Not estimatedThe source records don’t support an estimate.

Classification8 codes

G05F 3/267
Current mirrors: using both bipolar and field-effect technology
G05F 1/463
As a function of the requirements of the load, e.g. delay, temperature, specific voltage/current characteristic: sources providing an output which…
G05F 1/465
As a function of the requirements of the load, e.g. delay, temperature, specific voltage/current characteristic: internal voltage generators for…
G05F 1/468
Wherein the variable actually regulated by the final control device is DC: characterised by reference voltage circuitry, e.g. soft start, remote…

Family

US 2015/0035588 A1Pre-grant publication · published 5 Feb 2015
US 9,405,306 B2Related patent
US 9,436,195 B2This patent

From the US filing history. Foreign family members aren’t listed.

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