Anti-reflective layer and method
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYu-Chung Su, Ching-Yu Chang, Wen-Yun Wang
Life of this patent
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Abstract
A system and method for anti-reflective layers is provided. In an embodiment the anti-reflective layer comprises a floating component in order to form a floating region along a top surface of the anti-reflective layer after the anti-reflective layer has dispersed. The floating component may be a floating cross-linking agent, a floating polymer resin, or a floating catalyst. The floating cross-linking agent, the floating polymer resin, or the floating catalyst may comprise a fluorine atom.
Claims20
A method of manufacturing a semiconductor device, the method comprising:
- applying an anti-reflective coating onto a substrate, the anti-reflective coating comprising a first component and a second component, wherein prior to the applying the anti-reflective coating the first component has a constant concentration within the anti-reflective coating;
- and
- forming a first region and a second region within the anti-reflective coating, wherein the first region comprises a first concentration of the first component and a second concentration of the second component and wherein the second region comprises a third concentration of the first component and the second concentration of the second component, wherein the first concentration is at least 0.01% and the third concentration is different from the first concentration.
A method of manufacturing a semiconductor device, the method comprising:
- forming fins located over a substrate;
- dispensing a bottom anti-reflective coating onto the fins, wherein the bottom anti-reflective coating is dispensed between the fins and comprises a first concentration of a first component as the bottom anti-reflective coating is dispensed;
- and
- forming a floating region within the bottom anti-reflective coating, wherein the floating region has a thickness of at least 10 Å and the first component has a second concentration larger than the first concentration within the floating region than a region outside of the floating region, and wherein a second component different from the first component has a constant concentration throughout both the floating region and outside of the floating region.
A method of manufacturing a semiconductor device, the method comprising:
- dispensing an anti-reflective material between a first fin and a second fin, wherein the first fin and the second fin comprise semiconductor material;
- waiting until a first component within the anti-reflective material forms a floating region with a thickness of at least 10 Å within the anti-reflective material, wherein the first component has a concentration within the floating region of between about 0.01% to about 10%;
- applying a photoresist over the floating region;
- and
- patterning the anti-reflective material while the photoresist is located over the anti-reflective material.
Dependencies are inferred from the claim text.