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US 9,436,082 B2Granted
Compositions comprising base-reactive component and processes for photolithography
AssigneeRohm and Haas Electronics Materials LLC
InventorsDeyan Wang, Shintaro Yamada, Cong Liu, Mingqi Li, Joon-Seok Oh, Chunyi Wu, Doris Kang, Cheng-Bai Xu
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Abstract
New photoresist compositions are provided that comprise one or more materials that have base-reactive groups and are particularly useful for dry lithography. Particularly preferred photoresists of the invention can exhibit reduced defects following development of a coating layer of the resist.
Claims9
A method for processing a photoresist composition, comprising:
- (a) applying on a substrate a photoresist composition comprising:
- (i) one or more resins,
- (ii) a photoactive component, and
- (iii) one or more materials that comprise base-reactive groups, the one or more materials distinct from the one or more resins;
- and
- (b) dry exposing the applied photoresist layer to radiation activating for the photoresist composition;
- wherein said (iii) one or more materials comprise a resin that comprises a repeat unit provided by at least one monomer represent by the following Formula (I), (II) or (III):
- where in Formula (I) M is a polymerizable functional group, R is an alkyl spacer group with or without carboxyl linkages, Rf is a fluoro or perfluoro alkyl group with at least the alpha carbon being fluorinated;
- wherein in Formula (II) M is a polymerizable functional group, R is C1-20 linear or branched alkyl spacer group with or without carboxyl linkages, Rf is a fluoro or perfluoro alkyl group with at least the alpha carbon being fluorinated, and n is an integer equal to or greater than 2;
- wherein in Formula (III) M is a polymerizable functional group R1 is an alkyl spacer with or without carboxyl linkages, Rf is a fluoro or perfluoro alkylene group with at least the alpha carbon being fluorinated, and R2 is an alkyl group.
7 more elements
Dependencies are inferred from the claim text.