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US 9,436,023 B2Granted
Operational amplifier
AssigneeNovatek Microelectronics Corp.
InventorWei-Ta Chiu
Life of this patent
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Abstract
An operational amplifier comprises a first metal-oxide-semiconductor field effect transistor (MOSFET), comprising a first drain, a first gate and a first source; a second MOSFET, comprising a second drain, a second gate and a second source, the second source coupled to the first source of the first MOSFET; and a bias source, coupled between a first specific level and the first source of the first MOSFET and the second source of the second MOSFET; wherein the first MOSFET and the second MOSFET are depletion-type.
Claims3
An operational amplifier, comprising:
- a first metal-oxide-semiconductor field effect transistor (MOSFET), comprising a first drain, a first gate and a first source;
- a second MOSFET, comprising a second drain, a second gate and a second source, the second source coupled to the first source of the first MOSFET;
- and
- a bias source, coupled between a first specific voltage level and the first source of the first MOSFET and the second source of the second MOSFET;
- wherein the first MOSFET and the second MOSFET are depletion-type;
- wherein a first body of the first MOSFET and a second body of the second MOSFET are coupled to a second specific voltage level, and the second specific voltage level is equal to the first specific voltage level or between the first specific voltage level and a voltage level of the first source of the first MOSFET and the second source of the second MOSFET;
- wherein the first MOSFET and the second MOSFET are N-channel MOSFETs, and the first specific voltage level is a ground voltage level.
4 more elements
Dependencies are inferred from the claim text.