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US 9,435,947 B2Granted
Integration of optical components in integrated circuits by separating two substrates with an insulation layer
AssigneeGlobalfoundries Inc.
InventorErrol T. Ryan
Life of this patent
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Abstract
Methodologies enabling integration of optical components in ICs and a resulting device are disclosed. Embodiments include: providing a first substrate layer of an IC separated from a second substrate level by an insulator layer; providing a transistor on the second substrate layer; and providing an optical component on the first substrate layer, the optical component being connected to the transistor.
Claims20
An apparatus comprising:
- a first substrate layer of an integrated circuit (IC), the first substrate layer including an optical component;
- an insulator layer on the first substrate layer;
- a second substrate layer separated, at least in part, from the first substrate layer by the insulator layer;
- a transistor on the second substrate layer, the transistor being connected to the optical component
- a waveguide on the first substrate layer, the waveguide being connected to the transistor;
- and
- a heat transfer via (HTV) extending vertically through a horizontal portion of the insulator layer and the first substrate layer, the HTV being adjacent to the second substrate layer and aligned vertically with the transistor,
- wherein the thickness of the insulator layer is greater than a thickness of the first substrate layer.
5 more elements
An apparatus comprising:
- a wafer for an integrated circuit (IC) comprising:
- a bulk silicon layer extending in a horizontal direction;
- a buried oxide (BOX) layer extending in the horizontal direction and having a thickness less than a thickness of the bulk silicon layer;
- and
- a silicon on insulator (SOI) layer separated, at least in part, from the bulk silicon layer by the BOX layer, the SOI layer extending in the horizontal direction and having a thickness less than the thickness of the BOX layer;
- at least one transistor on the bulk silicon layer;
- an optical component in the SOI layer;
- a through silicon via (TSV) extending vertically through the bulk silicon layer and the BOX layer, the TSV connecting the at least one transistor and the optical component;
- and
- a heat transfer via (HTV) extending vertically through a horizontal portion of the BOX layer and the SOI layer, the HTV being adjacent to the bulk silicon layer and aligned vertically with the at least one transistor.
7 more elements
An apparatus comprising:
- a first substrate layer of an integrated circuit (IC) separated from a second substrate layer by an insulator layer;
- a transistor on the second substrate layer, the transistor being in direct contact with the second substrate layer;
- a waveguide on the first substrate layer, the waveguide being connected to the transistor;
- and
- a heat transfer via (HTV) extending vertically through a horizontal portion of the insulator layer and the first substrate layer, the HTV being adjacent to the second substrate layer and aligned vertically with the transistor,
- wherein the thickness of the insulator layer is greater than a thickness of the first substrate layer.
3 more elements
Dependencies are inferred from the claim text.