Multi-bit magnetic memory cell

Apparatus, comprising:

• a first Hall effect sensor having a first terminal, a second terminal, a third terminal and a fourth terminal;
• a second Hall effect sensor having a fifth terminal, a sixth terminal, a seventh terminal and an eighth terminal;
• a conductor connecting the third terminal to the fifth terminal;
• and
• a processor, which is configured to measure a first potential between the fourth terminal and the sixth terminal while transferring a first bias current from the first terminal to the seventh terminal via the conductor, to measure a second potential between the first terminal and the seventh terminal while transferring a second bias current from the fourth terminal to the sixth terminal via the conductor, to determine a resultant voltage generated by the first and second Hall effect sensors in response to the first and second potentials, and to determine a value stored in the first and second Hall effect sensors responsive to the determined resultant voltage.