Method for testing special pattern and probe card defect in wafer testing

A method for testing a probe card defect in wafer testing, adapted for a test machine to determine whether a probe card of a wafer has a defect, the method for testing the probe card defect in wafer testing comprising:

• dividing the wafer into a plurality of testing partitions, wherein each of the testing partitions comprises a plurality of dies;
• respectively testing the dies in each testing partition of the wafer in at least one wafer by a plurality of sites of the probe card;
• accumulating a number of the dies having defects and a number of the dies without defect in a result obtained by each of the sites testing the dies of the testing partitions of the wafer to construct chi-square test and calculate a maximum P-value;
• determining whether a minimum of the maximum P-values of all of the sites is smaller than a threshold;
• and
• determining that the probe card has a defect when the minimum is smaller than the threshold.

A method for testing wafer testing, adapted for a test machine to determine whether a testing result of at least one wafer has a defect, the method for testing wafer testing comprising:

• dividing each wafer into a plurality of testing partitions, wherein each of the testing partitions comprises a plurality of dies;
• respectively testing the dies in the testing partitions of each wafer in the at least one wafer by a plurality of sites of a probe card;
• accumulating a number of the dies having defects and a number of the dies without defect within each of the testing partitions of each wafer to construct chi-square test and calculate a maximum P-value;
• determining whether a minimum of the maximum P-values of all of the testing partitions is smaller than a threshold;
• and
• determining that the wafer testing has a defect when the minimum is smaller than the threshold.