CMOS MOEMS sensor device

A sensor device comprising:

• A Silicon-based light emitting structure operating in avalanche breakdown mode, the light emitting structure being a SiLED and capable of transmitting light having a wavelength higher than 600 nm but lower than the absorption edge of silicon at 950 nm;
• A monolithically integrated wave-guiding system integrated with the silicon light emitting structure, the wave-guiding system comprising a trench in a substrate being outlined by a thin layer of oxide and a higher refractive index material, which can be of square or circular refractive index profile so as to create either single mode or multimode optical propagation;
• An interface module introducing an intensity change and/or phase change of the transmitted light;
• A detector for detecting the intensity and/or phase change;
• and
• An integrated electronic driving and processing circuitry so as to process the detector output signal, so as to sense parameters such as vibration, motion, rotation, acceleration, gas flow, gas composition or liquid flow or liquid composition or to detect optical absorption, additional wavelength added or omitted elements in gaseous or fluidic samples, wherein
• the Silicon-based light emitting structure, the monolithically integrated wave-guiding system, the detector, and the integrated electronic driving and processing circuitry are integrated on a single chip.