Bismuth-doped semi-insulating group III nitride wafer and its production method
AssigneesSixPoint Materials, Inc., Seoul Semiconductor Co., Ltd.
InventorsTadao Hashimoto, Edward Letts, Sierra Hoff
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Abstract
The present invention discloses a semi-insulating wafer of GaxAlyIn1-x-yN (0≦x≦1, 0≦x+y≦1) which is doped with bismuth (Bi). The semi-insulating wafer has the resistivity of 104 ohm-cm or more. Although it is very difficult to obtain a single crystal ingot of group III nitride, the ammonothermal method can grow highly-oriented poly or single crystal ingot of group III nitride having the density of dislocations/grain boundaries less than 105 cm−2. The invention also disclose the method of fabricating the semi-insulating group III nitride bulk crystals and wafers.
Claims17
A method of growing a bismuth doped group III nitride bulk crystal having a surface area greater than 10 mm2 and thickness greater than 200 microns comprising:
- a. placing a group III containing nutrient in a high-pressure reactor;
- b. placing a mineralizer in the high-pressure reactor;
- c. placing at least one seed crystal in the high-pressure reactor;
- d. placing a bismuth-containing dopant in the high-pressure reactor;
- e. placing ammonia in the high-pressure reactor;
- f. sealing the high-pressure reactor;
- g. providing sufficient heat to the ammonia to create a supercritical state of ammonia;
- and
- h. crystallizing group III nitride on the seed crystal, wherein a sufficient amount of the bismuth-containing dopant is present such that the crystallized group III nitride is semi-insulating.
Dependencies are inferred from the claim text.