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AssigneeSumitomo Metal Mining Co., Ltd.
InventorsToshio Morimoto, Tatsuya Takahashi, Isao Ando, Tetsufumi Komukai, Masanori Takagi, Eriko Sato, Hirotaka Minami
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Provided are a method for producing a Cu—Ga alloy powder, by which a high quality Cu—Ga alloy powder to be produced readily; a Cu—Ga alloy powder; a method for producing a Cu—Ga alloy sputtering target; and a Cu—Ga alloy sputtering target. Specifically, a Cu—Ga alloy powder is produced by stirring a mixed powder containing a Cu powder and a Ga in a mass ratio of 85:15 to 55:45 at a temperature of 30 to 700° C. in an inert atmosphere thereby accomplishing alloying. Also a Cu—Ga alloy sputtering target is produced by molding the Cu—Ga alloy powder followed by sintering.
A method for producing a Cu—Ga alloy powder comprising stirring a mixed powder containing a Cu powder and a Ga in a mass ratio of 85:15 to 55:45 at a temperature of 30 to 700° C. in an inert atmosphere thereby accomplishing alloying, wherein a mean particle size of the Cu powder is 1 to 300 μm.
A method for producing a Cu—Ga alloy sputtering target, the method comprising:
Dependencies are inferred from the claim text.