Method for forming pattern, and polysiloxane composition

A pattern-forming method comprising:

• (1) providing a silicon-containing film on an upper face side of a substrate to be processed using a polysiloxane composition;
• (2) forming a resist pattern on the silicon-containing film;
• (3) dry-etching the silicon-containing film using the resist pattern as a mask to form a silicon-containing pattern;
• and
• (4) dry-etching the substrate to be processed using the silicon-containing pattern as a mask to form a pattern,
• wherein the polysiloxane composition comprises:
• (A) a polysiloxane comprising a fluorine atom;
• (B) a crosslinking accelerator;
• and
• (C) water,
• wherein the polysiloxane (A) comprises a fluorinated hydrocarbon group which may be substituted, and the fluorinated hydrocarbon group which may be substituted is a fluorinated alkyl group, a fluorinated alicyclic hydrocarbon group, a pentafluorophenyl group, a fluorinated aryl group other than a fluorinated phenyl group, or a fluorinated aralkyl group, and
• wherein the crosslinking accelerator (B) is a nitrogen-containing compound which generates a compound having a basic amino group by heating.