MEMS device
AssigneeSeiko Epson Corporation
InventorTakahiko Yoshizawa
Life of this patent
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Abstract
A MEMS device includes a semiconductor substrate having a main surface with a first region in which a trench is formed and a second region in which an impurity diffusion region of a semiconductor circuit element is formed; a functional element provided, either directly or via an insulating film, on a bottom surface of the trench of the semiconductor substrate; a wall portion in the trench of the semiconductor substrate and forming a cavity surrounding the functional element; a lid portion that covers the cavity; and a pillar in the cavity and in contact with either the bottom surface of the trench of the semiconductor substrate or the insulating film, and with a back surface of the lid portion.
Claims16
A MEMS device, comprising:
- a semiconductor substrate having a main surface with a first region in which a trench is formed and a second region in which an impurity diffusion region of a semiconductor circuit element is formed;
- a functional element provided, either directly or via an insulating film, on a bottom surface of the trench of the semiconductor substrate;
- a wall portion in the trench of the semiconductor substrate and forming a cavity surrounding the functional element;
- a lid portion that covers the cavity and includes a front surface and an edge between a top surface and a back surface defined by a thickness of the lid portion, wherein the back surface is a bottom surface of the lid portion facing the bottom surface of the trench;
- and
- a plurality of pillars in the cavity that are separated from the wall portion and in contact with either the bottom surface of the trench of the semiconductor substrate or the insulating film, and with the back surface of the lid portion.
A MEMS device, comprising:
- a semiconductor substrate having a main surface with a first region in which a trench is formed and a second region in which an impurity diffusion region of a semiconductor circuit element is formed;
- a functional element on a bottom surface of the trench of the semiconductor substrate, the functional element including a lower electrode and an upper electrode;
- a wall portion in the trench of the semiconductor substrate and forming a cavity surrounding the functional element;
- a lid portion that covers the cavity and is separated from the functional element by a gap, the lid portion including a front surface and an edge between a top surface and a back surface defined by a thickness of the lid portion, wherein the back surface is a bottom surface of the lid portion facing the bottom surface of the trench;
- and
- a plurality of pillars in the cavity that are separated from the wall portion and in contact with the bottom surface of the trench of the semiconductor substrate, with the lower electrode of the functional element and with the back surface of the lid portion.
Dependencies are inferred from the claim text.