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US 9,434,028 B2Granted
Soldering method and method of manufacturing semiconductor device
AssigneeFuji Electric Co., Ltd.
InventorAkira Iso
Life of this patent
Estimating the term…
Abstract
Provided is a soldering method through nickel plating layer to reduce void occurrence rate and a method of manufacturing semiconductor device by using the soldering method. By heating a copper base plate having a nickel plating layer at a temperature range of 300° C. to 400° C. in an inert gas atmosphere beforehand, void occurrence rate can be reduced in soldering the copper base plate to an insulating circuit board.
Claims14
A soldering method comprising:
- heat treating a member having a nickel plating layer including hydrogen in a heat treating temperature range of 300° C. to 400° C. in an inert gas atmosphere, thereby reducing a nickel oxide film on a surface of the nickel plating layer;
- disposing a solder between the heat-treated member and a joined member;
- and
- joining the heat-treated member to the joined member with the solder in a reducing gas atmosphere at a second temperature lower than the heat treating temperature.
1 more element
A method of manufacturing a semiconductor device comprising:
- heat treating a base plate having a nickel plating layer including hydrogen in a heat treating temperature range of 300° C. to 400° C. in an inert gas atmosphere, thereby reducing a nickel oxide film on a surface of the nickel plating layer;
- disposing a solder between the heat-treated base plate and an insulating circuit board;
- and
- joining the heat-treated base plate to a conductive foil of the insulating circuit board with the solder in a reducing gas atmosphere at a second temperature lower than the heat treating temperature.
1 more element
Dependencies are inferred from the claim text.