Semiconductor memory device and method for manufacturing the same

A method of manufacturing a semiconductor memory device, comprising:

• forming a stacked body by alternately stacking first insulating films and filling films in a first direction;
• forming a trench shaped like a trench penetrating the stacked body in the first direction, and provided in a second direction different from the first direction;
• forming a first recess by removing a part of the filling film via the trench, the part being located on the trench side;
• forming a second insulating film on an inner surface of the first recess;
• forming a first electrode film in the first recess;
• forming a third insulating film on a surface of the first electrode film;
• forming a semiconductor body by filling the trench with a semiconductor material;
• forming a plurality of semiconductor pillars by forming a first insulating member penetrating the semiconductor body in the first direction to divide the semiconductor body in the second direction, and dividing the third insulating film, the first electrode film, and the second insulating film in the second direction for each of the semiconductor pillars;
• forming a through hole dividing the first insulating member in the second direction;
• exposing a surface of the second insulating film by forming a hollow section by removing the filling film via the through hole;
• forming a second electrode film in the hollow section via the through hole;
• and
• forming the second insulating member by removing the second electrode film in the through hole and filling the through hole with an insulating material.

A method of manufacturing a semiconductor memory device, comprising:

• forming a stacked body by alternately stacking first insulating films and filling films in a first direction;
• forming a trench shaped like a trench penetrating the stacked body in the first direction, and provided in a second direction different from the first direction;
• forming a first insulating member by filling the trench with an insulating material;
• forming a memory hole penetrating the first insulating member in the first direction, and dividing the first insulating member in the second direction;
• forming a first recess by removing a part of the filling film via the memory hole, the part being located on the memory hole side;
• forming a second insulating film on an inner surface of the first recess;
• forming a first electrode film in the first recess;
• forming a third insulating film on a surface of the first electrode film;
• forming a semiconductor pillar by filling the memory hole with a semiconductor material;
• forming a through hole dividing the first insulating member in the second direction;
• exposing a surface of the second insulating film by forming a hollow section by removing the filling film via the through hole;
• forming a second electrode film in the hollow section via the through hole;
• forming the second insulating member by removing the second electrode film in the through hole and filling the through hole with an insulating material.