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US 9,431,389 B2Granted
ESD transistor for high voltage and ESD protection circuit thereof
AssigneeMagnaChip Semiconductor, Ltd.
InventorsKyong Jin Hwang, Jin Seop Shim, Jae Hyun Lee
Life of this patent
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Abstract
An ESD transistor and an ESD protection circuit thereof are provided. An ESD transistor includes a collector region disposed on a surface of a substrate, a sink region disposed vertically below the collector region, and a buried layer protruding horizontally further than the sink region under the sink region.
Claims27
An ESD transistor, comprising:
- a collector region disposed on a surface of a substrate;
- a sink region disposed vertically below the collector region;
- a buried layer protruding horizontally further than the sink region under the sink region;
- an emitter region spaced apart from a base contact region in a base region;
- and
- a first insulating film disposed between the emitter region and the base contact region,
- wherein the ESD transistor is a bipolar junction transistor.
4 more elements
An ESD transistor, comprising:
- a collector region on a surface of a substrate;
- a base region on the surface of the substrate;
- a base contact region disposed in the base region;
- an emitter region spaced apart from the base contact region in the base region;
- and
- a sink region disposed vertically below the collector region and spaced apart from the base region by a well region disposed between the sink region and the base region,
- wherein the base region surrounds the emitter region and the base contact region.
4 more elements
An ESD protection circuit comprising an ESD transistor that comprises a collector electrode, a base electrode, and an emitter electrode,
- wherein the collector electrode is connected to an I/O pad;
- the emitter electrode is connected to a ground electrode;
- a first resistor is connected between the emitter electrode and the base electrode;
- a first diode is connected between the emitter electrode and the collector electrode;
- and
- a charge pump circuit comprising a high-voltage FET that is connected between the collector electrode and the base electrode.
3 more elements
Dependencies are inferred from the claim text.