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US 9,429,835 B2Granted
Structure and method of photomask with reduction of electron-beam scatterring
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsWen-Chang Hsueh, Chia-Jen Chen, Hsin-Chang Lee
Life of this patent
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Abstract
The present disclosure provides a structure of a photomask. The photomask includes a substrate; and a conductive material layer dispose over the substrate and patterned to include a plurality of openings and a recess structure surrounding the plurality of openings.
Claims20
A photomask, comprising:
- a substrate;
- and
- a conductive material layer disposed over the substrate and patterned to include a plurality of openings and a recess structure surrounding the plurality of openings, wherein a portion of the conductive material layer is positioned directly under the recess structure such that the recess structure is separated from the substrate by the portion of the conductive layer.
A photomask, comprising:
- a substrate;
- and
- a material layer disposed over the substrate and patterned to include a plurality of openings and a recess structure surrounding the plurality of openings, wherein a portion of the material layer is positioned directly under the recess structure such that the recess structure is separated from the substrate by the portion of the material layer.
A photomask, comprising:
- a substrate;
- and
- a material layer dispose over the substrate and patterned to include a plurality of openings and a recess structure surrounding the plurality of openings, wherein a portion of the material layer is positioned directly under the recess structure such that the recess structure is separated from the substrate by the portion of the material layer.
Dependencies are inferred from the claim text.