Controlling current or mitigating electromagnetic or radiation interference effects using multiple and different semi-conductive channel regions generating structures

An electrical system comprising:

• a substrate formed having a first, second, and third section, wherein said first and third section are located on opposing sides of said second section;
• a first and second metal-oxide semiconductor field-effect transistor (MOSFET) sections each respectively disposed in said first and third substrate sections, each said first and second MOSFET sections comprising a first and second portion each comprising a first MOSFET first section, a body region formed into said first section, a source region formed into the first section inside said body region, a drain region formed outside of said body region, a gate insulator region formed over the first MOSFET section between said source and a substrate section covering the body region, and a control gate formed over said gate insulator region;
• a monolithic junction-field-effect transistor (JFET) section disposed into said second section of said substrate comprising an opposite dopant of said substrate placed in between two adjacent body regions comprising a neck region but not in contact with either body region;
• a control system for determining when said JFET and said first or second MOSFET sections are to be operated comprising an automated system including sensors for detecting an electromagnetic interference field as well as a control section;
• and
• a plurality of electrical sources coupled to said first and second MOSFET sections and said JFET.

An electrical system comprising:

• a junction field effect transistor (JFET);
• a first and second metal-oxide semiconductor (MOS) field-effect transistor (MOSFET) sections formed to respectively create a first and second semi-conductive channel region on opposing sides of said JFET, wherein said first and second MOSFET sections are disposed on opposite sides of said JFET to respectively create a third and fourth semi-conductive channel regions that passes through a portion of said first and second semi-conductive channel regions such that operation of the JFET modulates or controls current passing through otherwise controlled by an electrical path of the MOSFET sections associated with said first and second semi-conductive channel regions
• a control system for determining when said JFET and said first or second MOSFET sections are to be operated comprising an automated system including sensors for detecting an electromagnetic interference field as well as a control section;
• and
• a plurality of electrical sources coupled to said first and second MOSFET sections and said JFET.

A method associated with an electrical system comprising:

• providing an electrical system comprising a junction field effect transistor (JFET) and a first and second metal oxide semiconductor (MOS) field effect transistor (MOSFET) sections formed to respectively create a first and second semi-conductive channel region on opposing sides of said JFET, wherein said first and second MOSFET sections are disposed on opposite sides of said JFET to respectively create a third and fourth semi-conductive channel regions that passes through a portion of said first and second semi-conductive channel regions such that operation of the JFET modulates or controls current passing through otherwise controlled by an electrical path of the MOSFET sections associated with said first and second semi-conductive channel regions;
• providing a control system for determining when said JFET and said first or second MOSFET sections are to be operated comprising an automated system including sensors as well as a control section, wherein said determining step can comprise detecting a source of radiation or electromagnetic interference operable to affect operation of said first or second MOSFET sections;
• and
• providing a plurality of electrical sources coupled to said first and second MOSFET sections and said JFET.

A method associated with an electrical control system comprising:

• providing a substrate formed having a first, second, and third section, wherein said first and third section are located on opposing sides of said second section;
• providing a first and second metal-oxide semiconductor (MOS) field-effect transistor (MOSFET) sections each respectively disposed in said first and third substrate sections, each said first and second MOSFET sections comprising a first and second portion each comprising a first MOSFET first section, a body region formed into said first section, a source region formed into the first section inside said body region, a drain region formed outside of said body region, a gate insulator region formed over the first MOSFET section between said source and a substrate section covering the body region, and a control gate formed over said gate insulator region;
• providing a monolithic junction field effect transistor (JFET) section disposed into said second section of said substrate comprising an opposite dopant of said substrate placed in between two adjacent body regions comprising a neck region but not in contact with either body region;
• providing a control system for determining when said JFET and said first or second MOSFET sections are to be operated comprising an automated system including sensors as well as a control section, wherein said determining step can comprise detecting a source of radiation or electromagnetic interference operable to affect operation of said first or second MOSFET sections;
• and
• providing a plurality of electrical sources coupled to said first and second MOSFET sections and said JFET.