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US 9,318,571 B2Granted
Gate structure and method for trimming spacers
AssigneeUnited Microelectronics Corp.
InventorsI-Chang Wang, Ming-Tsung Chen, Ling-Chun Chou, Po-Chao Tsao, Tsung-Hung Chang, Hui-Ling Chen, Cheng-Yen Wu, Chieh-Te Chen, Shin-Chi Chen
Life of this patent
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Abstract
A gate structure includes a gate disposed on a substrate, a first spacer disposed on the substrate and surrounding the gate and a second spacer disposed on the first spacer and surrounding the gate, the second spacer is lower than the first spacer.
Claims8
A gate structure, comprising:
- a gate disposed on a substrate;
- a first spacer disposed on said substrate, surrounding said gate and being in an L shape;
- a second spacer disposed on said first spacer and surrounding said gate and having an arc outer sidewall, said second spacer being lower than half of said first spacer, wherein said arc outer sidewall has two ends contacting a horizontal part and a vertical part of said L shape of said first spacer respectively, an outer sidewall of a bottom of said first spacer and said arc outer sidewall of a bottom of said second spacer align with each other, and a top of said first spacer and a top of said second spacer have discontinuous change;
- and
- a stress film disposed on said gate, wherein said stress film directly contacts to said substrate, said two ends of said arc outer sidewall, and said vertical part of said L shape of said first spacer.
2 more elements
A gate structure, comprising:
- a gate disposed on a substrate;
- a first spacer disposed on said substrate, surrounding said gate and being in an L shape;
- a second spacer disposed on said first spacer and surrounding said gate and in a L shape, said second spacer being lower than half of said first spacer, wherein an outer sidewall of a bottom of said first spacer and an outer sidewall of a bottom of said second spacer align with each other, and a top of said first spacer and a top of said second spacer have discontinuous change;
- and
- a third spacer disposed on said second spacer and surrounding said gate.
2 more elements
Dependencies are inferred from the claim text.