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US 9,318,478 B1Granted
Semiconductor device and fabricating method thereof
AssigneeSamsung Electronics Co., Ltd.
InventorsDeok-Han Bae, Dong-Kwon Kim, Jong-Hyuk Kim, Yoon-Moon Park
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Abstract
A semiconductor device includes a first dummy gate having a first width, a second dummy gate adjacent to the first dummy gate in a lengthwise direction and having a second width, and a first bridge connecting the first dummy gate and the second dummy gate to each other. The first width and the second width are smaller than a minimum processing line width.
Claims20
A semiconductor device, comprising:
- a first dummy gate having a first width;
- a second dummy gate adjacent to the first dummy gate in a lengthwise direction and having a second width;
- and
- a first bridge connecting the first dummy gate and the second dummy gate to each other,
- wherein the first width and the second width are smaller than a minimum processing line width.
2 more elements
A semiconductor device, comprising:
- a first dummy gate having a first width;
- a second dummy gate adjacent to the first dummy gate in a lengthwise direction and having a second width;
- a first bridge connecting the first dummy gate and the second dummy gate to each other;
- a first gate having a third width;
- a second gate adjacent to the first gate in the lengthwise direction and having a fourth width;
- and
- a third gate having a fifth width greater than the third width and the fourth width,
- wherein the fifth width is greater than a distance between the first dummy gate and the second dummy gate.
5 more elements
A semiconductor device, comprising:
- a fin;
- a plurality of dummy gates adjacent to each other in a lengthwise direction, wherein the plurality of dummy gates cross the fin and each of the plurality of dummy gates has a width smaller than a minimum processing line width;
- and
- a plurality of bridge pairs formed between each of adjacent dummy gates from among the plurality of dummy gates,
- wherein the plurality of bridge pairs includes first to seventh bridge pairs, and the second to seventh bridge pairs are positioned at vertexes of a hexagonal honeycomb structure that is centered around the first bridge pair.
2 more elements
Dependencies are inferred from the claim text.