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US 9,318,393 B2Granted
Semiconductor device having test unit, electronic apparatus having the same, and method for testing the semiconductor device
AssigneeSK hynix Inc.
InventorByung Wook Bae
Life of this patent
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Abstract
A semiconductor device can detect a defective or faulty part caused by copper (Cu) ions migrated from a through silicon via (TSV), resulting in improvement of device characteristics and reliability. The semiconductor device includes: a semiconductor substrate including an active region defined by a device isolation region; a through silicon via (TSV) formed to pass through the semiconductor substrate; and a test unit formed in the vicinity of the TSV so as to determine the presence or absence of metal pollution caused by the TSV.
Claims16
A semiconductor device comprising:
- a semiconductor substrate including an active region defined by a device isolation region;
- a contact including a metal material and disposed over the semiconductor substrate;
- and
- a test unit disposed in the vicinity of the contact to determine metal pollution caused by the contact,
- wherein the contact includes a through silicon via (TSV) passing through the semiconductor substrate, and
- wherein the test unit is formed in a region between a logic unit and the TSV, the region being included in a Keep Out Zone (KOZ).
3 more elements
A semiconductor device comprising:
- a logic unit formed over a semiconductor substrate so as to perform a memory operation;
- a through silicon via (TSV) formed to pass through the semiconductor substrate;
- and
- a test unit formed between the logic unit and the TSV so as to determine the presence or absence of short-circuiting of the semiconductor substrate located in the vicinity of the TSV.
1 more element
Dependencies are inferred from the claim text.