Photomask-forming glass substrate and making method
AssigneeShin-Etsu Chemical Co., Ltd.
InventorsDaijitsu Harada, Mamoru Morikawa, Masaki Takeuchi, Yukio Shibano
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Abstract
A photomask-forming glass substrate having a square major surface is provided wherein two strip regions are defined on the major surface near a pair of opposed sides such that each region spans between 2 mm and 10 mm inward of the side and excludes end portions extending 2 mm inward from the opposed ends of the side, a least squares plane is computed for each of the two strip regions, the angle included between normal lines to the least squares planes of two strip regions is within 10 seconds, and the height difference between two strip regions is up to 0.5 μm.
Claims4
A square-shaped glass substrate for a photomask, the glass substrate having a pair of major surfaces and a patterned light-shielding film on one surface of the substrate which is chucked at chucking portions in an exposure tool, wherein
- the major surface where the chucking portions are disposed is delineated by four peripheral sides,
- two strip regions are defined on the major surface near a pair of opposed sides such that each region spans between 2 mm and 10 mm inward of the side and extends parallel to the side, but excludes end portions extending 2 mm inward from the longitudinally opposed ends of the side,
- a least squares plane is computed for each of the two strip regions, based on a distance from any common reference plane to a coordinate point within the strip region,
- the angle included between normal lines to the two least squares planes of the two strip regions is less than or equal to 10 seconds,
- on the assumption that F1 is the least squares plane of one strip region, F2 is the least squares plane of the other strip region, F3 is a least squares plane for a major surface region coextensive with the major surface, excluding peripheral portions extending 2 mm inward from the four sides, but including the two strip regions, a plane F3′ parallel to F3 is disposed such that the center of a strip region-equivalent region of F1 and the center of a strip region-equivalent region of F2 may fall on the same side relative to F3′, and the two strip regions have a height difference represented by the absolute value |D1−D2| of the difference between a distance D1 of a normal line drawn from the center of a strip region-equivalent region of F1 to plane F3′ and a distance D2 of a normal line drawn from the center of a strip region-equivalent region of F2 to plane F3′, and
- the height difference between the two strip regions is less than or equal to 0.5 μm.
Dependencies are inferred from the claim text.