Extreme ultraviolet lithography process and mask
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChih-Tsung Shih, Shinn-Sheng Yu, Jeng-Horng Chen, Anthony Yen
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Abstract
A system of an extreme ultraviolet lithography (EUVL) is disclosed. The system includes a mask having first and second reflective regions. The system also includes an illumination to expose the mask to produce a resultant reflected light form the mask. The resultant reflected light is constructed by a first reflected light reflected from the first reflective region and a second reflected light reflected from the second reflective region. The resultant reflected light contains mainly diffracted light. The system also includes a projection optics box (POB) to collect and direct resultant reflected light to expose a target.
Claims22
An extreme ultraviolet (EUV) lithography system, comprising:
- a mask having first and second reflective regions, wherein the mask includes:
- a reflective multilayer;
- a first metal-containing layer disposed on the reflective multilayer in the first reflective region, wherein the second reflective region is free of the first metal-containing layer;
- and
- a second metal-containing layer disposed on the reflective multilayer in the second reflective region, wherein the second metal-containing layer is different in composition from the first metal-containing layer, and wherein the second metal-containing layer does not extend between the first metal-containing layer and the reflective multilayer in the first reflective region;
- an illuminator to expose the mask to produce a resultant reflected light including a first reflected light reflected from the first reflective region and a second reflected light reflected from the second reflective region, wherein the resultant reflected light includes diffracted light;
- and
- optics to collect and direct the resultant reflected light towards a target.
A mask for extreme ultraviolet lithography (EUVL), comprising:
- a low thermal expansion material (LTEM) layer;
- a reflective multilayer (ML) above one surface of the LTEM layer;
- a first and a second reflective regions formed over the reflective ML, wherein a reflected light from the first reflective region has an about 180 degree phase shift with respect to a reflected light from the second reflective region;
- a first metal-containing layer disposed on the reflective ML in the first reflective region, wherein the first metal-containing layer does not extend into the second reflective region;
- and
- a second metal-containing layer disposed on the reflective ML in the second reflective region, wherein the second metal-containing layer does not extend between the first metal-containing layer and the reflective ML in the first reflective region.
An extreme ultraviolet (EUV) lithography process, comprising:
- receiving a mask having first and second reflective regions, wherein the mask includes:
- a reflective multilayer;
- a first metal-containing layer disposed on the reflective multilayer in a first region, wherein a second region is free of the first metal-containing layer;
- and
- a second metal-containing layer disposed on the reflective multilayer in the second region, wherein the second metal-containing layer is different in composition from the first metal-containing layer, and wherein the second metal-containing layer does not extend between the first metal-containing layer and the reflective multilayer in the first region;
- exposing the mask by an illumination to produce a resultant reflected light from the first and the second reflective regions, wherein the resultant reflected light includes more diffracted light than non-diffracted light;
- and
- directing the resultant reflective light to expose a target.
Dependencies are inferred from the claim text.