Method and apparatus for controlling beam angle during ion implantation of a semiconductor wafer based upon pressure
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsNai-Han Cheng, Chi-Ming Yang
Life of this patent
Estimating the term…
Abstract
One or more techniques or systems for ion implantation are provided herein. A pressure control module is configured to maintain a substantially constant pressure within an ion implantation or process chamber. Pressure is maintained based on an attribute of an implant layer, pressure data, feedback, photo resist (PR) outgassing, a PR coating rate, a space charge effect associated with the implant layer, etc. By maintaining pressure within the process chamber, effects associated with PR outgassing are mitigated, thereby mitigating neutralization of ions. By maintaining charged ions, better control over implantation of the ions is achieved, thus allowing ions to be implanted at a desired depth.
Claims20
A method of ion implantation, comprising:
- determining a set of implant parameters for an implant layer of a wafer being implanted with ions;
- accelerating one or more ions to a first energy level based on the set of implant parameters;
- implanting, within a process chamber, at least some of the one or more ions into the implant layer of the wafer;
- and
- measuring a pressure within the process chamber, wherein:
- the implanting comprises controlling a beam angle, associated with at least some of the one or more ions, via an electroplate based upon the pressure within the process chamber.
An ion beam implant system, comprising:
- an implant module configured to accelerate one or more ions of an ion source to a first energy level;
- a decel module downstream of the implant module configured to decelerate at least some of the one or more ions to a second energy level;
- a mass separator downstream of the implant module configured to filter one or more particles from the one or more ions;
- a process chamber downstream of the mass separator configured to receive at least some of the one or more ions;
- a pressure sensor configured to determine a pressure within the process chamber;
- and
- an electroplate configured to control a beam angle, associated with at least some of the one or more ions, based on the pressure.
An ion beam implant system, comprising:
- an implant module configured to accelerate one or more ions of an ion source to a first energy level;
- a process chamber downstream of the implant module configured to receive at least some of the one or more ions;
- a pressure sensor configured to determine a pressure within the process chamber;
- and
- an electroplate configured to control a beam angle, associated with at least some of the one or more ions, based on the pressure.
Dependencies are inferred from the claim text.