Methods of forming MEMS device
AssigneeShanghai Huahong Grace Semiconductor Manufacturing Corporation
InventorsZhenxing Zhang, Pei Xi, Lei Xiong, Jianpeng Wang, Ting Shi
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Abstract
A method of forming a micro-electro-mechanical systems (MEMS) device includes: providing a substrate; forming a tantalum nitride (TaN) layer on the substrate; forming a dielectric anti-reflective coating (DARC) layer on the TaN layer; coating photoresist on the DARC layer and etching the DARC: and TaN layers to form a trench; performing intensified ashing and wet cleaning processes to remove the photoresist and the DARC layer. The DARC layer can prevent the formation of tantalum-containing polymeric substances from a reaction between the TaN layer and the photoresist during the intensified ashing process.
Claims10
A method of forming a micro-elctro-rnechanical systems (MEMS) device, comprising the following steps in the sequence set forth:
- providing a substrate;
- forming a tantalum nitride layer on the substrate;
- forming a dielectric anti-reflective coating layer on the tantalum nitride layer;
- coating a photoresist on the dielectric anti-reflective coating layer and performing a photolithographic process to form a photoresist pattern;
- sequentially etching the dielectric anti-reflective coating layer and the tantalumnitride layer to form a trench by using the photoresist pattern as an etching mask;
- and
- performing an intensified ashing process and a wet cleaning process to remove the photoresist pattern and the dielectric anti-reflective coating layer, wherein the dielectric anti-reflective coating layer prevents the tantalum nitride layer from reacting with the photoresist to form tantalum-containing polymeric substances during the intensified ashing process, wherein the intensified ashing process is conducted with a mixture of CF4 with a concentration of 40 sccm and O2 with a concentration of 1500 sccm introduced at a temperature of 80°C. to 130°C.
A method of forming a micro-electro-mechanical systems (MEMS) device, comprising the following steps in the sequence set forth:
- providing a substrate;
- forming a tantalum nitride layer on the substrate;
- forming a dielectric anti-reflective coating layer on the tantalum nitride layer;
- forming a bottom anti-reflective coating layer on the dielectric anti-reflective coating layer;
- coating a photoresist on the bottom anti-reflective coating layer and performing a photolithographic process to form a photoresist pattern;
- sequentially etching the bottom anti-reflective coating layer, the dielectric anti-reflective coating layer and the tantalum nitride layer to form a trench using the photoresist pattern as an etching mask;
- and
- performing an intensified ashing process and a wet cleaning process to remove the photoresist pattern, the bottom anti-reflective coating layer and the dielectric anti-reflective coating layer, wherein the dielectric anti-reflective coating layer prevents the tantalum nitride layer from reacting with the photoresist to form tantalum-containing polymeric substances during the intensified ashing process, wherein the intensified ashing process is conducted with a mixture of CF4 with a concentration 40 sccm and O2 with a concentration of 1500 sccm introduced at a temperature of 80°C. to 130°C.
Dependencies are inferred from the claim text.