Semiconductor devices and methods for manufacturing the same

A method for manufacturing a semiconductor device, comprising:

• forming a first shielding layer on a substrate;
• forming one of source and drain regions with the first shielding layer as a mask;
• forming a second shielding layer on the substrate, and removing at least a portion of the first shielding layer;
• forming a first spacer on a sidewall of the second shielding layer or on a sidewall of a remaining portion of the first shielding layer;
• forming the other of the source and drain regions with the second shielding layer, the possible remaining portion of the first shielding layer and the first spacer as a mask;
• removing the first spacer;
• and
• forming a gate dielectric layer, and forming a gate conductor in the form of spacer on a sidewall of the second shielding layer or on a sidewall of the remaining portion of the first shielding layer.

A semiconductor device, comprising:

• a substrate;
• and
• source and drain regions and a gate stack formed on the substrate,
• wherein the gate stack comprises:
• a gate dielectric layer;
• and
• a gate conductor, which is formed in the form of spacer on a sidewall of a dielectric layer or a gate spacer on one side of the gate stack, wherein the gate conductor has its side surface on the one side and also its bottom surface covered by the gate dielectric layer, and its side surface on the other side opposite to the one side covered by a further dielectric layer.