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US 9,312,305 B2Granted
Phase-change memory device having multiple diodes
AssigneeSK hynix Inc.
InventorHae Chan Park
Life of this patent
Estimating the term…
Abstract
A phase-change memory device with an improved current characteristic is provided. The phase-change memory device includes a metal word line, a semiconductor layer of a first conductivity type being in contact with the metal word line, and an auxiliary diode layer being in contact with metal word line and the semiconductor layer.
Claims3
A phase-change memory device, comprising:
- a semiconductor substrate;
- a metal word line formed on the semiconductor substrate;
- a polysilicon layer of a first conductivity type being in contact with an upper portion of the metal word line;
- and
- an auxiliary diode layer formed laterally and directly adjacent to outer sidewalls of the polysilicon layer to be in electrical contact with the metal word line and having a second conductivity type opposite to the first conductivity type.
2 more elements
A phase-change memory device, comprising:
- a semiconductor substrate;
- a metal word line formed on the semiconductor substrate;
- a polysilicon layer of a first conductivity type being in contact with an upper portion of the metal word line;
- and
- an auxiliary diode layer formed laterally and directly adjacent to outer sidewalls of the metal word line to be in electrical contact with the polysilicon layer and having a second conductivity type opposite to the first conductivity type.
2 more elements
A phase-change memory device, comprising:
- a semiconductor substrate;
- a metal word line formed on the semiconductor substrate;
- a polysilicon layer of a first conductivity type being in contact with an upper portion of the metal word line;
- and
- an auxiliary diode layer formed laterally and directly adjacent to outer sidewalls of the metal word line and the polysilicon layer and having a second conductivity type opposite to the first conductivity type.
2 more elements
Dependencies are inferred from the claim text.