Back to results
US 9,312,273 B2Granted
Structure and method to reduce crystal defects in epitaxial fin merge using nitride deposition
AssigneeInternational Business Machines Corporation
InventorsThomas N. Adam, Kangguo Cheng, Ali Khakifirooz, Alexander Reznicek, Raghavasimhan Sreenivasan
Life of this patent
Estimating the term…
Abstract
FinFET devices and methods of making the same. A structure includes: a substrate with a buried insulator, a plurality of fins over the buried insulator, and a nitride material filing spaces between the plurality of fins, wherein the plurality of fins remain uncovered by the nitride.
Claims10
A method for forming a FinFET comprising:
- providing a substrate with a buried insulator;
- providing a plurality of fins over the buried insulator;
- recessing the buried insulator between the plurality of the fins;
- and
- filling spaces between the plurality of fins with nitride material, wherein at least one sidewall of each of the plurality of fins remain uncovered by the nitride material.
2 more elements
Dependencies are inferred from the claim text.