Semiconductor element having conductive damascene structures extending perpendicular to doping strips, and manufacturing method of the same

A semiconductor element, comprising:

• a substrate;
• a plurality of doping strips formed in the substrate;
• a memory material layer formed on the substrate, the memory material layer comprising a memory area located on two sides of each of the plurality of doping strips;
• a plurality of conductive damascene structures formed on the memory material layer;
• a conductive layer formed between each of the plurality of conductive damascene structures and the memory material layer;
• and
• a dielectric structure formed on the each of the plurality of doping strips and between the each of the plurality of conductive damascene structures;
• wherein the each of the plurality of conductive damascene structures are extended in a direction perpendicular to a direction which the each of the plurality of doping strips are extended in, an end of the each of the plurality of conductive damascene structures is embedded in a corresponding conductive layer and the dielectric structure, and a bottom surface of the end is connected to a bottom surface of a concave region in the dielectric structure.