Mask that provides improved focus control using orthogonal edges
AssigneeInternational Business Machines Corporation
InventorsJaione Tirapu Azpiroz, Alan E. Rosenbluth, Timothy A Brunner
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AssigneeInternational Business Machines Corporation
InventorsJaione Tirapu Azpiroz, Alan E. Rosenbluth, Timothy A Brunner
Estimating the term…
A method includes selecting a mask blank for lithographically forming a desired pattern of main features to be printed onto a wafer by projection lithography. First locations are identified in the desired pattern, the first locations being those which would produce on the wafer images impacted by phase distortions of actinic light through openings in the desired pattern. Second locations in the desired pattern are identified for the insertion of orthoedges. The orthoedges are provided to contribute an additional amplitude of actinic light to the images impacted by phase distortions when the actinic light is projected onto the wafer. The orthoedges are then inserted into the desired pattern at the second locations at orientations such that the orthoedges provide a quadrature component to the additional amplitude of actinic light having an opposite sign to the quadrature component of the actinic light producing the phase distortions. Finally, the mask blank is formed lithographically with the desired pattern modified through the insertion of the orthoedges.
A method comprising:
An apparatus comprising:
A computer program product comprising a computer-readable storage medium bearing computer program code embodied therein for use with a computer, the computer program code comprising code for performing at least the following:
A mask for use in lithographically forming a desired pattern of main features on a wafer by projection lithography, said mask comprising:
Dependencies are inferred from the claim text.