Apparatus fabrication using localized annealing
AssigneeFreescale Semiconductor, Inc.
InventorNirmal David Theodore
Life of this patent
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Abstract
A method for fabricating an apparatus using radiation annealing includes forming an annealable layer on a substrate. A radiation absorbing layer is also formed on the substrate, wherein the radiation absorbing layer heats up In response to radiation, and the radiation absorbing layer is formed adjacent to at least a portion of the annealable layer and non-adjacent to a portion of the apparatus. Radiation is directed toward the apparatus to heat up the radiation absorbing layer to anneal the at least a portion of the annealable layer that is adjacent to the radiation absorbing layer without annealing the portion of the apparatus that is non-adjacent to the radiation absorbing layer.
Claims18
A method for fabricating an electrical or electronic apparatus using radiation annealing, the method comprising:
- forming an electrically activatable annealable layer on a substrate;
- forming a radiation absorbing layer on the substrate, wherein the radiation absorbing layer heats up in response to radiation, and the radiation absorbing layer is permanently formed adjacent to at least a portion of the annealable layer and non-adjacent to a portion of the electrical or electronic apparatus, wherein the annealable layer and the radiation layer are included in a first pair of layers;
- forming at least one additional pair of layers on the substrate, wherein each additional pair of layers includes another annealable layer and another radiation absorbing layer;
- directing radiation toward the electrical or electronic apparatus to, for each pair of layers, heat up the radiation absorbing layer to anneal the at least a portion of the annealable layer that is adjacent to the radiation absorbing layer without annealing the portion of the apparatus that is non-adjacent to the radiation absorbing layer.
A method for fabricating an electrical or electronic apparatus using radiation annealing, the method comprising:
- forming an electrically activatable first annealable layer on a substrate;
- forming a radiation absorbing layer on the substrate, wherein the radiation absorbing layer heats up in response to radiation, and the radiation absorbing layer is permanently formed adjacent to at least a portion of the first annealable layer and non-adjacent to a portion of the electrical or electronic apparatus, wherein forming the radiation absorbing layer on the substrate comprises positioning radiation absorbing material adjacent to a first portion of the first annealable layer and non-adjacent to a second portion of the first annealable layer, such that the first portion of the first annealable layer is annealed using the radiation without annealing the second portion of the first annealable layer;
- forming a second annealable layer on the substrate after the first annealable layer and the radiation absorbing layer are formed on the substrate, wherein the radiation absorbing layer has a higher radiation absorption capability than the second annealable layer, and wherein a first portion of the second annealable layer is positioned adjacent to the radiation absorbing material and a second portion of the second annealable layer is positioned non-adjacent to the radiation absorbing material;
- directing radiation toward the electrical or electronic apparatus to heat up the radiation absorbing layer to anneal the at least a portion of the first annealable layer that is adjacent to the radiation absorbing layer without annealing the portion of the apparatus that is non-adjacent to the radiation absorbing layer and such that the first portion of the second annealable layer is annealed using the radiation without annealing the second portion of the second annealable layer.
An apparatus comprising:
- a structure having an annealed section and a non-annealed section;
- susceptor material that is integral to the apparatus and permanently positioned adjacent to the annealed section such that the annealed and non-annealed sections are defined by a shape of the susceptor material, wherein the annealed section was formed from material that was annealed at a temperature at least partially due to heat from the susceptor material's exposure to radiation, wherein the annealed section and the susceptor material comprise multiple annealable layer and susceptor layer pairs.
Dependencies are inferred from the claim text.