3D memory having crystalline silicon NAND string channel

A three-dimensional (3D) non-volatile storage device, comprising:

• a plurality of conductive layers above a substrate;
• a plurality of dielectric layers alternating with the plurality of conductive layers above the substrate;
• and
• a plurality of NAND strings, each of the NAND strings comprising:
• a tunnel oxide layer, wherein the tunnel oxide layer has a hollow cylindrical shape that extends vertically with respect to the plurality of conductive layers, the hollow cylindrical shape having an inner surface;
• and
• a channel region that comprises crystalline silicon, wherein the crystalline silicon has a hollow cylindrical shape having an inner surface and an outer surface, wherein the outer surface is in direct physical contact with the inner surface of the tunnel oxide layer, wherein the tunnel oxide layer completely surrounds the crystalline silicon, wherein the crystalline silicon comprises one or more crystal lattice structures, wherein predominantly all of the one or more crystal lattice structures have a (100) plane that is oriented parallel to the outer surface of the crystalline silicon.

A method of forming a three-dimensional (3D) non-volatile storage device, comprising:

• forming a plurality of horizontal layers of material above a substrate;
• and
• forming a plurality of vertically oriented NAND strings in the horizontal layers, wherein forming each of the vertically oriented NAND strings comprises:
• forming a tunnel oxide layer, wherein the tunnel oxide layer has a hollow cylindrical shape that extends vertically with respect to the plurality of horizontal layers of material, the hollow cylindrical shape having an inner surface;
• and
• forming a channel region that comprises crystalline silicon, wherein the crystalline silicon has a hollow cylindrical shape, wherein the tunnel oxide layer completely surrounds the crystalline silicon, wherein the crystalline silicon has predominantly a (100) orientation with respect to the inner surface of the tunnel oxide layer.