Semiconductor device comprising metal-based eFuses of enhanced programming efficiency by enhancing heat generation
AssigneeGlobalfoundries Inc.
InventorsAndreas Kurz, Jens Poppe, Matthias Kessler
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Abstract
In sophisticated semiconductor devices, electronic fuses may be provided in the metallization system, wherein a superior two-dimensional configuration of the metal line, for instance as a helix-like configuration, may provide superior thermal conditions in a central line portion, which in turn may result in a more pronounced electromigration effect for a given programming current. Consequently, the size of the electronic fuse, at least in one lateral direction, and also the width of corresponding transistors connected to the electronic fuse, may be reduced.
Claims16
A semiconductor device, comprising:
- a metallization system comprising a first metallization layer and a second metallization layer positioned above said first metallization layer;
- a first metal line positioned in said first metallization layer;
- a second non-linear metal line positioned in said second metallization layer;
- and
- a cathode via positioned in said second metallization layer and connecting said second non-linear metal line with said first metal line, said cathode via being positioned so as to be laterally offset from said second non-linear metal line along two orthogonal lateral directions by substantially the same amount, said cathode via and said second non-linear metal line forming a fuse body of an electronic fuse.
A semiconductor device, comprising:
- a metallization system;
- an electronic fuse positioned in a first metallization layer of said metallization system, said electronic fuse comprising a fuse body, said fuse body comprising a continuous non-linear metal line having a central line portion positioned laterally between a plurality of peripheral line portions, wherein said central line portion and said plurality of peripheral line portions form a helix-like configuration;
- a first metal line positioned in a second metallization layer of said metallization system, wherein said second metallization layer is positioned below said first metallization layer and said first metal line is conductively coupled to said electronic fuse;
- and
- a second metal line positioned in said second metallization layer, wherein said second metal line is conductively coupled to said electronic fuse.
A semiconductor device, comprising:
- an electronic fuse comprising a helix-like metal line positioned in a metallization layer of a metallization system, said helix-like metal line comprising a plurality of linear line portions;
- and
- a first via positioned in said metallization layer and connecting a central line portion of said helix-like metal line to a first metal region positioned in a lower lying metallization layer of said metallization system, wherein at least two of said plurality of linear line portions are non-collinear and have substantially the same offset from said central line portion.
Dependencies are inferred from the claim text.