Methods of forming a protection layer to protect a metal hard mask layer during lithography reworking processes

A method, comprising:

• forming a layer of insulating material above a semiconductor substrate;
• forming a hard mask layer above said layer of insulating material;
• forming a blanket protection layer on said hard mask layer;
• forming a first masking layer above said blanket protection layer;
• performing at least one first etching process on said first masking layer to form a first patterned masking layer having a first opening that stops on and exposes a first upper surface portion of said blanket protection layer without exposing said underlying hard mask layer;
• while said blanket protection layer is covering said hard mask layer, confirming that said first patterned masking layer is improperly positioned relative to at least one underlying structure or layer;
• performing a masking layer removal process to remove said improperly positioned first patterned masking layer from above said blanket protection layer, said blanket protection layer protecting said hard mask layer from exposure to said masking layer removal process;
• after removing said first patterned masking layer, forming a second masking layer above said blanket protection layer;
• performing at least one second etching process on said second masking layer to form a second patterned masking layer having a second opening that stops on and exposes a second upper surface portion of said blanket protection layer without exposing said underlying hard mask layer;
• while said blanket protection layer is covering said hard mask layer, confirming that said second patterned masking layer is properly positioned relative to at least one underlying structure or layer;
• after confirming that said second patterned masking layer is properly positioned, performing at least one etching process through said second patterned masking layer to pattern said blanket protection layer and said hard mask layer, said patterned hard mask layer exposing an upper surface portion of said layer of insulating material;
• removing said patterned blanket protection layer, and
• after removing said patterned blanket protection layer, forming one of a trench and an opening in said layer of insulating material through said patterned hard mask layer.

A method, comprising:

• forming a layer of insulating material above a semiconductor substrate;
• forming a hard mask layer above said layer of insulating material;
• forming a blanket protection layer on said hard mask layer, wherein a thickness of said blanket protection layer falls within the range of about 2-15 nm;
• forming a masking layer above said blanket protection layer;
• performing at least one etching process on said masking layer to form a patterned masking layer having an opening that stops on and exposes an upper surface portion of said blanket protection layer without exposing said underlying hard mask layer;
• while said blanket protection layer is covering said hard mask layer, confirming that said patterned masking layer is properly positioned relative to at least one underlying structure or layer;
• and
• after confirming that said patterned masking layer is properly positioned, performing at least one etching process through said patterned masking layer to pattern said blanket protection layer and said underlying hard mask layer, said patterned hard mask layer exposing an upper surface portion of said layer of insulating material.