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US 9,285,671 B2Granted
Mask for use in lithography
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYen-Cheng Lu, Shinn-Sheng Yu, Anthony Yen
Life of this patent
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Abstract
A mask, or photomask, is used in lithography systems and processes. The mask includes a first polygon of a first state and a second polygon of a second state. The mask also includes a field of the first state and a third polygon of the second state, and in the field. The first and second states are different, and the first and second polygons are located outside of the field.
Claims20
A mask for use in lithography, comprising:
- a first polygon of a first state;
- a second polygon of a second state;
- a field of the first state;
- and
- a third polygon of the second state, and in the field;
- wherein the first and second states are different, and
- wherein the first and second polygons are located outside of the field.
4 more elements
A mask for use in extreme ultraviolet lithography (EUVL), comprising:
- first and second main polygons;
- and
- a field surrounding the first and second main polygons;
- wherein the first and second main polygons have first and second reflection coefficients, respectively;
- wherein the field has the first reflection coefficient;
- and
- wherein the field includes a plurality of assist polygons having the second reflection coefficient.
4 more elements
An extreme ultraviolet lithography (EUVL) mask, comprising:
- a low thermal expansion material (LTEM) substrate;
- a reflective multilayer (ML) above one surface of the LTEM substrate;
- a conductive layer above an opposite surface of the LTEM substrate;
- a capping layer above the reflective ML;
- a buffer layer above the capping layer;
- and
- a patterned absorption layer above the buffer layer, wherein the patterned absorption layer includes multiple main polygons having different states, surrounded by a field with a plurality of assist features.
4 more elements
Dependencies are inferred from the claim text.